Polarization switching in near-stoichiometric Zn:LiNbO 3 at high temperatures

• Published in: Solid state communications Vol. 150; no. 27; pp. 1258 - 1261
• Main Authors: Reddy, J.N. Babu, Bhat, H.L., Elizabeth, Suja
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2010
• Subjects: A. Ferroelectric crystals; A. Stoichiometric lithium niobate; D. Polarization switching; A. Stoichiometric lithium niobate; A. Ferroelectric crystals; D. Polarization switching
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2010.03.032

The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature ( T C ) . Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures, and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching.