Microstructural and conductive properties of BaRuO 3 thin films

• Published in: Solid state communications Vol. 128; no. 9; pp. 391 - 395
• Main Authors: Kaur, Davinder, Rao, K.V.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2003
• Subjects: A. Ruthenates; A. Thin films; B. Laser ablation; C. Microstructure; B. Laser ablation; A. Thin films; 70; A. Ruthenates; C. Microstructure
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2003.07.005

We have grown conducting BaRuO 3 films on (100) LaAlO 3 substrate using pulsed laser deposition technique over temperature range varying from 500 to 775 °C. The films are well textured and are c-axis oriented with an in-plane epitaxial relationship of 〈010〉〈100〉BaRuO 3∥〈110〉 LaAlO 3. Atomic force microscopy observation shows that they consist of a fine arranged network of grains and have a mosaic microstructure. Surfaces with smooth terraces have been observed by Scanning Tunneling Microscopy. The resistivity of the films has been found to be a strong function of substrate temperature during film deposition. Both metallic and semiconducting behaviour has been observed in these films. Temperature-dependence resistivity measurement shows that the film has a metallic curve if it is deposited at 700 °C or lower but it transfers to a semiconducting-metallic twofold curve if the deposition temperature is increased. This unique phenomenon, which is not observed in bulk, may provide new features useful in the fabrication of novel electronic devices.