The influence of CH x coating on the optical properties of porous silicon

In this work, we report a study on the influence of CH x thickness layer on optical properties of CH x /PS/Si structures. The hydrocarbon groups were deposited by plasma of methane–argon mixture. The properties of these structures are investigated by photoluminescence (PL), reflection and spectral r...

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 38; no. 1; pp. 168 - 171
Main Authors Benzekkour, N., Gabouze, N., Ferdjani, K., Sam, S., Henda, K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2007
Subjects
CH x films
Optical properties
Porous silicon
RF pulverization
Thin films
Thin films
73.50.Gr
78.55.Mb
RF pulverization
Optical properties
78.66.Bz
Porous silicon
52.80.Pi
CH x films
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Summary:In this work, we report a study on the influence of CH x thickness layer on optical properties of CH x /PS/Si structures. The hydrocarbon groups were deposited by plasma of methane–argon mixture. The properties of these structures are investigated by photoluminescence (PL), reflection and spectral response measurements from where a different behavior depending on CH x layer thickness has been observed. The entire total reflection spectrum is modulated by Fabry–Pérot fringes that are a result of thin film interference. As the CH x layer thickness increases, the amplitude of the interferences decreases and a positive shift of the maximum peak is observed. The PL spectra from CH x /PS samples with two CH x layer thicknesses show more intense luminescence than that observed from PS sample and the existence of an optimum thickness CH x that gives the maximum PL intensity. The spectral response spectra show the presence of an intense peak at 450 nm. Finally, the results point out the importance of CH x coating in optoelectronic applications.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2006.12.035