Effect of structural defects on InSb/Al xIn 1− x Sb quantum wells grown on GaAs [formula omitted] substrates
We investigate oriented abrupt steps (OASs), a type of surface defect in InSb/Al x In 1− x Sb quantum-well (QW) samples grown on GaAs (0 0 1) substrates. Previous atomic force microscopy studies have reported that the OASs are oriented along the [1 1 0] and [ 1 ̄ 1 0] directions and have an inclinat...
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Published in | Physica. E, Low-dimensional systems & nanostructures Vol. 20; no. 3; pp. 260 - 263 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
2004
|
Subjects | |
Online Access | Get full text |
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Summary: | We investigate oriented abrupt steps (OASs), a type of surface defect in InSb/Al
x
In
1−
x
Sb quantum-well (QW) samples grown on GaAs
(0
0
1)
substrates. Previous atomic force microscopy studies have reported that the OASs are oriented along the
[1
1
0]
and
[
1
̄
1
0]
directions and have an inclination angle of ∼5°–15° with respect to the sample surface. Our plan-view and cross-sectional transmission electron microscopy analyses reveal that the OASs are the terminal edges of threading micro-twins at the sample surface. Hall effect measurements indicate that the density of OASs correlates with the electron mobility in the InSb QWs. |
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ISSN: | 1386-9477 1873-1759 |
DOI: | 10.1016/j.physe.2003.08.014 |