Nd2−xCexCuO4−y/Nd2−xCexOy boundary and resistive switchings in mesoscopic structures on base of epitaxial Nd1.86Ce0.14CuO4−у films

• Published in: Physica. C, Superconductivity Vol. 527; pp. 41 - 45
• Main Authors: Tulina, N.A., Rossolenko, A.N., Ivanov, А.А., Sirotkin, V.V., Shmytko, I.M., Borisenko, I.Yu, Ionov, А.М.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.08.2016
• Subjects: Diodes; Heterostructures; High temperature superconductors; Oxides; Resistive switchings; Resistive switchings; High temperature superconductors; Oxides; Diodes; Heterostructures
• ISSN: 0921-4534; 1873-2143
• DOI: 10.1016/j.physc.2016.05.015

•The CVCs of Nd1.85Ce0.15CuO4−у heterocontacts with the buffer layer Nd0.5Ce0.5O1.75 exhibited the resistive switchings.•Numerical simulation was used to consider the influence of field distribution in the heterocontact interface on switchings.•The spatial carrier inhomogeneities in the buffer layer NCO produce electric field influence on observed effects. Reverse and stable bipolar resistive switching effect (BRSE) was observed in planar Nd2−xCex CuO4−y/Nd2−xCexOx/Ag heterostructure. It was shown that the СVС of the BRSE observed has a diode character. Simulations were used to consider the influence of the nonuniform distribution of an electric field at the interface of a heterojunction on the effect of bipolar resistive switching in investigated structures. The inhomogeneous distribution of the electric field near the contact edge creates regions of higher electric field strength which, in turn, stimulates motion and redistribution of defects, changes of the resistive properties of the whole structure and formation of a percolation channel.