Effect of annealing on the crystal structure and dielectric properties of Ba 0.6Sr 0.4TiO 3 thick films

Ba 0.6Sr 0.4TiO 3 (BST) films with different thickness were grown on (0 0 1) MgO substrates by pulsed laser deposition. Effects of thickness and post-deposition annealing on the crystal structure and dielectric properties of BST films are investigated. Enhancement of the crystal structure through po...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 393; no. 1; pp. 175 - 178
Main Authors Cao, L.Z., Meng, Q.D., Fu, W.Y., Wang, S.F., Lei, M., Cheng, B.L., Zhou, Y.L., Chen, Z.H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2007
Subjects
(Ba,Sr)TiO 3 film
Dielectrics properties
Epitaxial growth
Heat treatment
Phase shifter
Thickness
Thickness
77.55.+f
Heat treatment
(Ba,Sr)TiO 3 film
81.40.Ef
77.22.Ch
Epitaxial growth
68.55.JK
Dielectrics properties
Phase shifter
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Summary:Ba 0.6Sr 0.4TiO 3 (BST) films with different thickness were grown on (0 0 1) MgO substrates by pulsed laser deposition. Effects of thickness and post-deposition annealing on the crystal structure and dielectric properties of BST films are investigated. Enhancement of the crystal structure through post-deposition annealing is analyzed from the viewpoint of energy minimization principle of stable state. The best dielectric properties are obtained for the 500-nm-thick BST film with post-deposition annealing at 1000 °C in flowing O 2 atmosphere. Based on the high-quality BST film, a distributed microwave phase shifter was fabricated, and promising high-frequency device performance is achieved.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2006.12.084