Depth profiling of high energy nitrogen ions implanted in the 〈100〉, 〈110〉 and randomly oriented silicon crystals

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 274; pp. 87 - 92
• Main Authors: Erić, M., Petrović, S., Kokkoris, M., Lagoyannis, A., Paneta, V., Harissopulos, S., Telečki, I.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2012
• Subjects: Channeling implantation; Nuclear Reaction Analysis; RBS/C; Silicon amorphization; Silicon amorphization; RBS/C; Nuclear Reaction Analysis; Channeling implantation
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2011.12.008

► We have obtained profiles of 4MeV 14N2+ ions implanted in the 〈100〉, 〈110〉 and randomly oriented silicon crystals. ► Nitrogen profiling was done using NRA method. ► RBS/C spectra were also taken. ► We have noticed silicon matrix density change in the implantation region. ► We have obtained amorphization profiles. This work reports on the experimentally obtained depth profiles of 4MeV 14N2+ ions implanted in the 〈100〉, 〈110〉 and randomly oriented silicon crystals. The ion fluence was 1017particles/cm2. The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of 14N(d,α0)12C and 14N(d,α1)12C nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen “bubble” formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.