Effect of SrTiO 3 seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O 3 films by metalorganic chemical vapor deposition

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 148; no. 1; pp. 22 - 25
• Main Authors: Moon, Ji-Won, Wakiya, Naoki, Fujito, Keisuke, Iimori, Naohiko, Kiguchi, Takanori, Yoshioka, Tomohiko, Tanaka, Junzo, Shinozaki, Kazuo
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2008
• Subjects: Low-temperature crystallization; PZT; Seed layer; SrTiO 3; Low-temperature crystallization; SrTiO 3; Seed layer; PZT
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2007.09.051

The effect of SrTiO 3 seed layer thickness on low-temperature crystallization and electrical properties Pb(Zr, Ti)O 3 (PZT) films by metalorganic chemical vapor deposition (MOCVD) were investigated. The thicknesses of SrTiO 3 seeds were varied with 1–18 nm by deposition time. The preferred (1 1 1) PZT films could be obtained at 304 °C on SrTiO 3 seeds prepared at 500 °C. The intensity of (1 1 1) PZT phase was increased with deposition time due to the enhancement of coverage of SrTiO 3 seeds on substrate. The AFM observation revealed that the growth of PZT films was initially started on SrTiO 3 seeds. The remanent polarization (2 P r) and leakage current density were changed with seed layer thickness. It is considered that concentration of the electric field on SrTiO 3 seeds with capacitance changes were affected to electrical properties of PZT films. The 100 nm thick PZT films on 5 nm thick SrTiO 3 seeds showed 2 P r max (18 μC/cm 2) with 10 −6 A/cm 2 of leakage current density.