Transient current mechanism of lead zirconate titanate capacitors sputtered on La 0.65Sr 0.35MnO 3

The transient current in lead zirconate titanate (PZT) thin films grown epitaxially on La 0.65Sr 0.35MnO 3 (LSMO) as a bottom electrode was investigated. The dominant mechanism for leakage of this typical structure is proposed to be mobile charge. Current density–voltage ( J– V) data, temperature-de...

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Published inMicroelectronics and reliability Vol. 51; no. 5; pp. 925 - 926
Main Authors Dai, Mingzhi, Li, Mingming, Wu, Guodong, Li, Li, Jin, Huang
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2011
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Summary:The transient current in lead zirconate titanate (PZT) thin films grown epitaxially on La 0.65Sr 0.35MnO 3 (LSMO) as a bottom electrode was investigated. The dominant mechanism for leakage of this typical structure is proposed to be mobile charge. Current density–voltage ( J– V) data, temperature-dependent measurements of J and capacitance–voltage ( C– V) measurements are performed. Our results suggest that mobile charges, rather than other common mechanisms, is the main reason for the current shift with pulses and leakage. These results stress the role of mobile charge in sputtered PZT and therefore give hints to this important processing.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.01.003