Capacitance non-linearity study in Al 2O 3 MIM capacitors using an ionic polarization model

We have realized Al 2O 3 metal–insulator–metal (MIM) capacitors of three different thicknesses ranging from 7 to 20 nm, and performed capacitance versus voltage characterizations of the samples between 25 and 150 °C. The MIM capacitors presented increasing capacitance densities with temperature and...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 83; no. 11; pp. 2422 - 2426
Main Authors Bécu, S., Crémer, S., Autran, J.L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2006
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Summary:We have realized Al 2O 3 metal–insulator–metal (MIM) capacitors of three different thicknesses ranging from 7 to 20 nm, and performed capacitance versus voltage characterizations of the samples between 25 and 150 °C. The MIM capacitors presented increasing capacitance densities with temperature and parabolic C– V curves with a positive curvature. These results are widely observed in MIM capacitors with high- κ dielectrics such as HfO 2 [1], Ta 2O 5 [2] or Y 2O 3 [3], but non-linearity origins are rarely reported in literature. In this article, an attempt has been made to estimate the non-linearity of the permittivity in Al 2O 3 dielectric, assuming that electronic polarization did not contribute to the non-linearity.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2006.10.049