Capacitance non-linearity study in Al 2O 3 MIM capacitors using an ionic polarization model
We have realized Al 2O 3 metal–insulator–metal (MIM) capacitors of three different thicknesses ranging from 7 to 20 nm, and performed capacitance versus voltage characterizations of the samples between 25 and 150 °C. The MIM capacitors presented increasing capacitance densities with temperature and...
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Published in | Microelectronic engineering Vol. 83; no. 11; pp. 2422 - 2426 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
2006
|
Subjects | |
Online Access | Get full text |
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Summary: | We have realized Al
2O
3 metal–insulator–metal (MIM) capacitors of three different thicknesses ranging from 7 to 20
nm, and performed capacitance versus voltage characterizations of the samples between 25 and 150
°C. The MIM capacitors presented increasing capacitance densities with temperature and parabolic
C–
V curves with a positive curvature. These results are widely observed in MIM capacitors with high-
κ dielectrics such as HfO
2
[1], Ta
2O
5
[2] or Y
2O
3
[3], but non-linearity origins are rarely reported in literature. In this article, an attempt has been made to estimate the non-linearity of the permittivity in Al
2O
3 dielectric, assuming that electronic polarization did not contribute to the non-linearity. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2006.10.049 |