Improvement of the dielectric properties of rutile-doped Al 2O 3 ceramics by annealing treatment

The microwave dielectric properties of alumina (Al 2O 3) ceramics were studied. The objectives were to improve the large negative temperature coefficient of the resonant frequency ( τ f) of Al 2O 3 ceramics and to obtain a relatively large quality factor ( Qf) through the addition of rutile (TiO 2),...

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Bibliographic Details
Published inJournal of the European Ceramic Society Vol. 26; no. 10; pp. 2093 - 2096
Main Authors Miyauchi, Yasuharu, Ohishi, Yoshihiro, Miyake, Sinya, Ohsato, Hitoshi
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2006
Subjects
Al 2O 3
Electrical properties
Insulators
TiO 2
Electrical properties
Insulators
TiO 2
Al 2O 3
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Summary:The microwave dielectric properties of alumina (Al 2O 3) ceramics were studied. The objectives were to improve the large negative temperature coefficient of the resonant frequency ( τ f) of Al 2O 3 ceramics and to obtain a relatively large quality factor ( Qf) through the addition of rutile (TiO 2), which has a large positive τ f, and an annealing treatment. A near-zero τ f (+1.5 ppm/°C), excellent Qf (148,000 GHz) and ɛ r (12.4) were obtained in 0.9 Al 2O 3–0.1 TiO 2 ceramics sintered at 1350 °C for 2 h, followed by annealing at 1100 °C for 12 h in air.
ISSN:0955-2219
1873-619X
DOI:10.1016/j.jeurceramsoc.2005.09.063