Structural properties of the epitaxial CuCr 0.95Mg 0.05O 2 thin films on c-plane sapphire substrates by pulsed laser deposition
We report an investigation of the structural properties of CuCr 0.95Mg 0.05O 2 films on c-plane sapphire substrates using pulsed laser deposition. The thin films were grown at different temperatures of 500, 600, and 700 °C with an oxygen partial pressure of 10 mTorr. c-axis oriented epitaxial CuCr 0...
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Published in | Journal of crystal growth Vol. 326; no. 1; pp. 9 - 13 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
2011
|
Subjects | |
Online Access | Get full text |
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Summary: | We report an investigation of the structural properties of CuCr
0.95Mg
0.05O
2 films on c-plane sapphire substrates using pulsed laser deposition. The thin films were grown at different temperatures of 500, 600, and 700
°C with an oxygen partial pressure of 10
mTorr.
c-axis oriented epitaxial CuCr
0.95Mg
0.05O
2 thin films on c-plane sapphire substrates with an in-plan 30° rotation were obtained. The sixfold rotational symmetry in the pole figures from the (0
1
2) plane indicates that there are two different types of crystal grains in which the
a-axes rotate by 60° with respect to each other around the
c-axis. The reason for the 30° rotation is assumed to be the presence of the ∼10% mismatch of oxygen distance between the c-plane sapphire substrate and the CuCr
0.95Mg
0.05O
2 on the c-plane. The epitaxial crystallographic relationship between CuCr
0.95Mg
0.05O
2 and Al
2O
3 was (0
0
0
6)CuCrO
2//(0
0
0
3)Al
2O
3 and [1
0
−1
0]CuCrO
2//[1
1
−2
0]Al
2O
3. The presence of twins in the films and the surface morphology were investigated using transmission electron microscopy and scanning electron microscopy, respectively. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2011.01.041 |