InAs y P 1− y metamorphic buffer layers on InP substrates for mid-IR diode lasers

• Published in: Journal of crystal growth Vol. 312; no. 8; pp. 1165 - 1169
• Main Authors: Kirch, Jeremy, Garrod, Toby, Kim, Sangho, Park, Joo H., Shin, Jae C., Mawst, L.J., Kuech, T.F., Song, X., Babcock, S.E., Vurgaftman, Igor, Meyer, Jerry R., Kuan, Tung-Sheng
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2010
• Subjects: A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B1. Antimonides; B1. Phosphides; B3. Laser diodes; A3. Quantum wells; B1. Antimonides; B1. Phosphides; A3. Organometallic vapor phase epitaxy; B3. Laser diodes
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.12.057

The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.