Carbon doping of non-polar cubic GaN by CBr 4

• Published in: Journal of crystal growth Vol. 311; no. 7; pp. 2039 - 2041
• Main Authors: As, D.J., Tschumak, E., Pöttgen, H., Kasdorf, O., Gerlach, J.W., Karl, H., Lischka, K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2009
• Subjects: A1. Doping; A1. High-resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; A1. High-resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; A1. Doping
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.11.013

Non-polar carbon-doped cubic GaN (c-GaN:C) films were grown by the plasma-assisted molecular beam epitaxy (MBE) using carbon tetra-bromide (CBr 4) as a carbon source. The growth was in-situ monitored by the reflection high-energy electron diffraction (RHEED) and for the atomic carbon detection quadrupole mass spectrometry (QMS) was applied. Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) was used to quantify the carbon incorporation behavior. The structural, morphological and optical properties of the epilayers were studied by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements at room temperature and at 4 K. The electrical properties of c-GaN:C samples were determined by measuring the current–voltage ( I– V) characteristics at room temperature.