Oriented polycrystalline α-HgI 2 thick films grown by physical vapor deposition

This work investigates the growth of polycrystalline α-HgI 2 thick films from physical vapor deposition. By varying the growth conditions, the as-deposited thick films are characterized by scanning electron microscopy, X-ray diffraction, current–voltage and photoconductivity measurements. The growth...

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Bibliographic Details
Published inJournal of crystal growth Vol. 280; no. 3; pp. 442 - 447
Main Authors Shih, Chen-Tsung, Huang, Tang-Jung, Luo, Ying-Zi, Lan, San-Min, Chiu, Kuan-Cheng
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2005
Subjects
A1. Characterization
A1. Growth models
A3. Physical vapor deposition processes
B1. Mercuric iodide
68.37.Hk
A1. Growth models
73.50.−h
A3. Physical vapor deposition processes
81.15.Ef
68.55.Jk
A1. Characterization
B1. Mercuric iodide
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Summary:This work investigates the growth of polycrystalline α-HgI 2 thick films from physical vapor deposition. By varying the growth conditions, the as-deposited thick films are characterized by scanning electron microscopy, X-ray diffraction, current–voltage and photoconductivity measurements. The growth mechanism and its effects to the properties of these polycrystalline α-HgI 2 thick films are then discussed. Finally, the best deposition conditions for polycrystalline α-HgI 2 thick films compactly formed by separated columnar monocrystallines with uniform orientation along c-direction and with good crystallinity are reported.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2005.03.069