Fabrication of graded band-gap Cu(InGa)Se 2 thin-film mini-modules with a Zn(O,S,OH) x buffer layer

• Published in: Solar energy materials and solar cells Vol. 49; no. 1; pp. 277 - 283
• Main Authors: Kushiya, Katsumi, Tachiyuki, Muneyori, Kase, Takahisa, Sugiyama, Ichiro, Nagoya, Yoshinori, Okumura, Daisuke, Sato, Masao, Yamase, Osamu, Takeshita, Hiroshi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 1997
• Subjects: Cu(InGa)Se 2; Thin-film mini-modules; Zn(O,S,OH) x; Cu(InGa)Se 2; Zn(O,S,OH) x; Thin-film mini-modules
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/S0927-0248(97)00204-3

High-performance Cu(InGa)Se 2 (CIGS) thin-film absorbers with an intentionally graded band-gap structure have been fabricated by a simple two-stage method using In/CuGa/Mo stacked precursors and H 2Se gas. Additional sulfurization step to form a thin Cu(InGa)(SeS) 2 surface layer on the absorber is necessary to enhance the grain growth and improve the device performance. Improvement of the interface quality between the absorber and the Zn(O,S,OH) x buffer layer by applying a post-deposition light soaking has, for the first time, resulted in the efficiency of over 14% measured by JQA with a 50 cm 2 aperture-area monolithic mini-module. The post-deposition light-soaking treatments would be utilized as an effective tool leading to the accelerated process development with high yield for the future commercial production.