Properties of CuInS 2 thin films grown by a two-step process without H 2S

CuInS 2 thin films were prepared by sulfurization of sequentially deposited Cu In stacks with elemental sulfur. Precursors as well as reacted films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). Excess copper is required f...

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Published inSolar energy materials and solar cells Vol. 49; no. 1; pp. 349 - 356
Main Authors Klenk, R., Blieske, U., Dieterle, V., Ellmer, K., Fiechter, S., Hengel, I., Jäger-Waldau, A., Kampschulte, T., Kaufmann, Ch, Klaer, J., Lux-Steiner, M.Ch, Braunger, D., Hariskos, D., Ruckh, M., Schock, H.W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1997
Subjects
Thin films
Two-step process
Thin films
Two-step process
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Summary:CuInS 2 thin films were prepared by sulfurization of sequentially deposited Cu In stacks with elemental sulfur. Precursors as well as reacted films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). Excess copper is required for optimum properties and leads to a CuS secondary phase segregated at the surface. Stoichiometry is regained by etching after which heterojunctions are formed by deposition of a CdS ZnO window layer. An active area efficiency of 10.4% has been achieved.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(97)00083-4