Epitaxial Si 1− x Ge x grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 68; no. 3; pp. 171 - 174
• Main Authors: Nakahata, Takumi, Sugihara, Kohei, Furukawa, Taisuke, Yamakawa, Satoshi, Maruno, Shigemitsu, Tokuda, Yasunori, Yamamoto, Kazuma, Inagaki, Toru, Kiyama, Hiromi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2000
• Subjects: Contact hole; LSI; Selective epitaxy; SiGe; UHV-CVD; Selective epitaxy; SiGe; LSI; Si; UHV-CVD; Contact hole
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(99)00592-9

An ultrahigh-vacuum chemical vapor deposition technique with disilane (Si 2H 6) and germane (GeH 4) molecular flux is applied to Si 1− x Ge x ( x=0–0.15) selective growth into fine contact holes. The growth behavior of epitaxial Si 1− x Ge x layer is influenced by addition of GeH 4 with Si 2H 6 flow rate kept at constant, which is interpreted by estimation of facet growth rates. The growth rates of (311) and (111) facets are drastically decreased by addition of a small amount of GeH 4. As a result, in the fine holes, the epitaxial layer height of Si 1− x Ge x is limited by the (311) growth rate and decreased compared with pure Si.