Preparation of La 2− xSr xCuO 4 single-crystalline films by infrared-heated liquid phase epitaxial technique

We have designed a new liquid phase epitaxial (LPE) technique, infrared heated LPE (IR-LPE) technique, using no crucible to avoid a contamination from it. La 2− x Sr x CuO 4 single-crystalline films were grown on the a tetra-axis-orientated bulk single crystals of Zn- or Ni-doped La 2CuO 4 by the IR...

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Bibliographic Details
Published inPhysica. C, Superconductivity Vol. 362; no. 1; pp. 180 - 185
Main Authors Tanaka, Isao, Ashizawa, Ken, Tanabe, Hideyoshi, Watauchi, Satoshi, Yamanaka, Junji
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2001
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Summary:We have designed a new liquid phase epitaxial (LPE) technique, infrared heated LPE (IR-LPE) technique, using no crucible to avoid a contamination from it. La 2− x Sr x CuO 4 single-crystalline films were grown on the a tetra-axis-orientated bulk single crystals of Zn- or Ni-doped La 2CuO 4 by the IR-LPE technique. La 2− x Sr x CuO 4 single-crystalline films of the thickness 35–250 μm and of Sr content 0.08⩽ x⩽0.15 were obtained. The superconducting properties in the La 2− x Sr x CuO 4 films were improved to T c,onset≈36 K for x=0.11, which is 10 K higher than that in the La 2− x Sr x CuO 4 bulk single crystals.
ISSN:0921-4534
1873-2143
DOI:10.1016/S0921-4534(01)00667-0