A resonant tunneling diode based on a Ga 1− xMn xAs/GaAs double barrier structure

We introduce here a device capable of producing a strongly spin-polarized current. It can be useful in spintronics as a polarizer, an analyzer and other applications. Consequently, it could be useful in quantum computing. The device consists of a resonant tunneling diode with a ferromagnetic well ma...

Full description

Saved in:
Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 320; no. 1; pp. 396 - 399
Main Authors Makler, S.S., Boselli, M.A., Weberszpil, J., Wang, X.F., da Cunha Lima, I.C.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2002
Subjects
Nanostructures
Semiconductors
Spintronics
73.40.Gk
Semiconductors
75.50.Pp
73.23.Ad
Nanostructures
Spintronics
Online AccessGet full text

Cover

More Information
Summary:We introduce here a device capable of producing a strongly spin-polarized current. It can be useful in spintronics as a polarizer, an analyzer and other applications. Consequently, it could be useful in quantum computing. The device consists of a resonant tunneling diode with a ferromagnetic well made of Ga 1− x Mn x As. The levels at the well are spin polarized and so is the current through the system. To study the transport properties of the system we use a new formalism capable of treating, in an exact and very efficient way, an open system. The result is that the current could be polarized parallel or antiparallel to the magnetization of the well, depending on the applied bias.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(02)00757-3