High-field electron transport in Al xGa 1− x as diodes investigated tracing ultrafast absorption changes

The topic of this contribution is the investigation of transient, nonequilibrium high-field electron transport in GaAs. Our two key ingredients are a unique laser system, which provides fs pump and probe pulses of independently tunable wavelengths and an AlGaAs hetero p–i–n diode with sophisticated...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 314; no. 1; pp. 273 - 277
Main Authors Schwanhäußer, A., Eckardt, M., Robledo, L., Betz, M., Lutz, H., Trumm, S., Leitenstorfer, A., Seilmeier, A., Döhler, G.H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2002
Subjects
Femtosecond spectroscopy
High field
Nonequilibrium electron transport in GaAs
Femtosecond spectroscopy
72.10.Di
78.47.+p
High field
71.38.+i
Nonequilibrium electron transport in GaAs
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Summary:The topic of this contribution is the investigation of transient, nonequilibrium high-field electron transport in GaAs. Our two key ingredients are a unique laser system, which provides fs pump and probe pulses of independently tunable wavelengths and an AlGaAs hetero p–i–n diode with sophisticated design. This combination allows us to obtain time- and spatially resolved information about the temporal evolution of a photo-generated electron ensemble from ballistic to side-valley dominated transport, without disturbing hole contributions. Fields ranging from 7 to 180 kV/cm are investigated. Results are compared successfully to Monte Carlo Simulations.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)01391-6