Formation and characterizations of ultra-shallow p +–n junctions using B 10H 14 ion implantation

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 206; pp. 409 - 412
• Main Authors: Jeon, G.Y., Kim, J.S., Whang, C.N., Im, S., Song, J.-H., Song, J.H., Choi, W.K., Kim, H.K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2003
• Subjects: Decaborane; Hall measurement; Implantation; Leakage current density; Shallow junction; 68.55.+P; Implantation; Decaborane; Hall measurement; Leakage current density; 61.72.Tt; 82.80.Yc; Shallow junction
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(03)00774-2

We report on the ultra-shallow p +–n junction formation by decaborane (B 10H 14) ion implantation into n-Si(1 0 0) substrates. The implantation energies of 5, 10 and 15 keV were used with the doses of 1 × 10 12 and 1 × 10 13 cm −2. The implanted samples were then subject to activation-annealing at 800, 900 and 1000 °C for 10 s. According to the results of secondary ion mass spectrometry, the p + layer thinner than 50 nm formed in most of the samples. Current–voltage ( I– V) measurements performed on the p +–n junction exhibited that the minimum leakage current density at −5 V was ∼10 −6 A/cm 2 when the decaborane of 1 × 10 13 cm −2 was implanted, while the maximum activated carrier dose of p + layers was measured up to 8.1 × 10 13 cm −2 by Hall measurements.