LiTaO 3 films with c-axis preferred orientation prepared on Si(111) substrate by sol–gel method

• Published in: Materials letters Vol. 44; no. 3; pp. 125 - 129
• Main Authors: Cheng, S.D., Zhou, Y., Kam, C.H., Han, X.Q., Que, W.X., Lam, Y.L., Chan, Y.C., Oh, J.T., Gan, W.S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2000
• Subjects: c-Axis texture; LiTaO 3; Rapid thermal processing; Sol–gel processing; Thin films; X-ray diffraction; Thin films; Rapid thermal processing; 68.55.−a; 81.20.Fw; Sol–gel processing; X-ray diffraction; 42.70.Mp; c-Axis texture; 77.84.Dy; LiTaO 3; 81.40.−z
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/S0167-577X(00)00014-8

LiTaO 3 films with c-axis preferred orientation have been prepared on Si(111) substrates using sol–gel spin-coating and rapid thermal annealing. Hydrogen-terminated silicon surface, preheating temperature, and unidirectional heat flow during the heat treatment are essential factors for the c-axis texture. The texture is useful in pyroelectric, metal-ferroelectric-semiconductor (MFS) nonvolatile memory, and integrated optics applications.