The growth kinetics of Si 1− xGe x layers from SiH 4 and GeH 4

In this paper we introduce a kinetic model of growth from silane and germane at low pressures. The stationary and non-stationary growth kinetics have been studied both in the presence of ‘hot wires’ and in their absence.

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Bibliographic Details
Published inThin solid films Vol. 336; no. 1; pp. 191 - 195
Main Authors Potapov, A.V., Orlov, L.K., Ivin, S.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1998
Subjects
GeH 4
Growth kinetics
Numerical simulation
SiH 4
SiH 4
Model
GeH 4
Numerical simulation
Growth kinetics
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Summary:In this paper we introduce a kinetic model of growth from silane and germane at low pressures. The stationary and non-stationary growth kinetics have been studied both in the presence of ‘hot wires’ and in their absence.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01236-X