Fatigue and dielectric properties of the (Pb, La)TiO 3 thin films with various La concentrations

• Published in: Thin solid films Vol. 373; no. 1; pp. 53 - 59
• Main Authors: Kang, Seong Jun, Chang, Dong Hoon, Yoon, Yung Sup
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2000
• Subjects: DRAM; Fatigue; Ferroelectric; Hysteresis; NVFRAM; Paraelectric; PLT thin film; Ferroelectric; Paraelectric; NVFRAM; PLT thin film; Fatigue; DRAM; Hysteresis
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(00)01104-4

Fatigue and dielectric properties of the PLT thin films have been studied with varying the La concentration. The fatigue and the dielectric properties improve remarkably with the increase of La concentration from 5 to 28 mol%. In particular, after applying 10 9 square pulses with ±5 V, the remanent polarization of the PLT(10) thin film decreases only approximately 20% from the initial state while that of the PLT(5) thin film decreases as much as 70%. As the La concentration increases from 5 to 28 mol%, the dielectric constant at 10 kHz increases from 428 to 761, while the loss tangent and the leakage current density at 150 kV/cm decreases from 0.063 to 0.024 and 6.96 to 0.79 μA/cm 2, respectively. These results show that PLT(10) and PLT(28) thin films are potential candidates for the capacitor dielectrics of a new generation of NVFRAM and DRAM, respectively.