Photoinduced phonon fluorescence in GaAs/Al xGa 1− xAs quantum wells
Phonon fluorescence in semiconductor quantum wells induced by two radiation fields is investigated here. The rate of change of the interface LO-phonon population due to the scattering of confined electrons in the two laser fields is calculated using first-order perturbation theory from which the amp...
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Published in | Solid state communications Vol. 108; no. 10; pp. 743 - 748 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
1998
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Subjects | |
Online Access | Get full text |
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Summary: | Phonon fluorescence in semiconductor quantum wells induced by two radiation fields is investigated here. The rate of change of the interface LO-phonon population due to the scattering of confined electrons in the two laser fields is calculated using first-order perturbation theory from which the amplification coefficient is derived. It was found, by considering the full photon absorption and emission processes of laser fields that for a semiconductor quantum well at arbitrary temperature, interface LO phonons propagating parallel to the direction of polarization of the external fields may be amplified over a relatively broad band of phonon wavenumber. An application is made for a GaAs/AlGaAs quantum well system. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/S0038-1098(98)00443-8 |