Photoinduced phonon fluorescence in GaAs/Al xGa 1− xAs quantum wells

• Published in: Solid state communications Vol. 108; no. 10; pp. 743 - 748
• Main Authors: Santos, W.P., Fonseca, A.L.A., Agrello, D.A., Nunes, O.A.C.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 1998
• Subjects: A. quantum wells; A. semiconductors; D. electron–phonon interactions; A. semiconductors; D. electron–phonon interactions; A. quantum wells
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/S0038-1098(98)00443-8

Phonon fluorescence in semiconductor quantum wells induced by two radiation fields is investigated here. The rate of change of the interface LO-phonon population due to the scattering of confined electrons in the two laser fields is calculated using first-order perturbation theory from which the amplification coefficient is derived. It was found, by considering the full photon absorption and emission processes of laser fields that for a semiconductor quantum well at arbitrary temperature, interface LO phonons propagating parallel to the direction of polarization of the external fields may be amplified over a relatively broad band of phonon wavenumber. An application is made for a GaAs/AlGaAs quantum well system.