Thin film crystal growth of BaZrO 3 at low oxygen partial pressure

• Published in: Journal of crystal growth Vol. 243; no. 1; pp. 164 - 169
• Main Authors: Kitano, Y, Matsui, T, Fujimura, N, Morii, K, Ito, T
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2002
• Subjects: A1. Interfaces; A2. Single crystal growth; A3. Laser epitaxy; B1. Oxides; B2. Dielectric materials; A3. Laser epitaxy; B1. Oxides; A2. Single crystal growth; B2. Dielectric materials; 68.55.Jk; A1. Interfaces
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01480-X

The growth of single crystalline oxides on silicon substrates still remains to be a significant technological subject, since the fruitful achievements can be expected for various silicon device technologies. We have ever examined the possibility of BaZrO 3 crystallization at low temperature and at low oxygen partial pressure, by a pulsed laser beam deposition technique. We confirmed that the BaZrO 3 films on SrTiO 3 (0 0 1) substrate could be epitaxially grown at the temperature as low as 500°C, and that the excellent crystallinity of BaZrO 3 can be obtained in the film grown at the low oxygen partial pressure, such as 2.0×10 −8 Torr. However of this, the epitaxially grown of BaZrO 3 thin films on Si (0 0 1) have not been obtained even at such a low oxygen partial pressure during deposition. This is considered to be due to the formation of the interfacial layer, which is amorphous SiO 2 or crystallized SiC depending upon the substrate temperature.