Growth of InBi xSb (1− x) films on GaAs(0 0 1) substrates using liquid phase epitaxy and their characterization

• Published in: Journal of crystal growth Vol. 241; no. 1; pp. 171 - 176
• Main Authors: Dixit, V.K., Keerthi, K.S., Bera, Parthasarathi, Bhat, H.L.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2002
• Subjects: A1. X-ray diffraction; A3. Liquid phase epitaxy; B1. Antimonides; B2. Semiconducting III–V material; B2. Semiconducting ternary compounds; B1. Antimonides; 81.05.E; A3. Liquid phase epitaxy; B2. Semiconducting III–V material; 78.30.A; A1. X-ray diffraction; 81.15.L; B2. Semiconducting ternary compounds
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01253-8

The growth of epitaxial InBi x Sb (1− x) ( x=4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at 1 μm resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9.2×10 16/cm 3 and the Hall mobility is 3.54×10 4 cm 2/V s at 300 K. The room temperature band gap has been found to be in the range of 0.134–0.140 eV. These results indicate that the grown films are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties.