Interaction of atomic hydrogen, HS and H 2S on GaAs(100)
Gaseous D-atoms are evidenced to react directly with adsorbed HS species, forming HD(g) and S remaining on the surface or HDS desorbing from the surface. On the other hand, exposing a D-covered GaAs(100) surface to H 2S molecules causes a gradual decrease in the amount of adsorbed D-atoms and promot...
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Published in | Chemical physics letters Vol. 312; no. 2; pp. 149 - 154 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
1999
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Online Access | Get full text |
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Summary: | Gaseous D-atoms are evidenced to react directly with adsorbed HS species, forming HD(g) and S remaining on the surface or HDS desorbing from the surface. On the other hand, exposing a D-covered GaAs(100) surface to H
2S molecules causes a gradual decrease in the amount of adsorbed D-atoms and promotes the formation of HS(ad) without the observation of accompanying H(ad). The pure HS species covered surface generated by the coadsorption of H
2S and D-atoms may lead to a more efficient S-passivation upon thermal annealing. |
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ISSN: | 0009-2614 1873-4448 |
DOI: | 10.1016/S0009-2614(99)00900-8 |