The Hall effect in selectively doped strained-layer Ge-Ge 1−xSi x superlattices superlattices

• Published in: Superlattices and microstructures Vol. 10; no. 4; pp. 467 - 470
• Main Authors: Mironov, O.A., Kuznetsov, O.A., Orlov, L.K., Rubtsova, R.A., Chernov, A.L., Chistyakov, S.V., Oszwaldowski, M., Aronzon, B.A., Chumakov, N.K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 1991
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/0749-6036(91)90311-E

For the first time, research on the unique galvanomagnetic properties of the hole gas in the channels of selectively doped CVD Ge-Ge 1−XSi X (X≤0, 2) superlattices with strained Ge layers was carried out. We have obtained a high value of the hole mobility 1.5 × 10 4 cm 2/V s (T = 4, 2 K) at a hole concentrations of (1–5) × 10 17 cm −3 in SLs channels. It is shown that the main contribution into the longitudinal conductivity of strained Ge-Ge 1−XSi X SL due to light hole band splitting under the strains in Ge layers.