X-ray topography of A IIIB V semiconductor epitaxial structures on the VEPP-4 SR beam

The results are presented of X-ray topography exposures of A IIIB V semiconductor autoepitaxial structures and single crystals on the VEPP-4 white SR beam in Laue reflection.

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Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 261; no. 1; pp. 257 - 259
Main Authors Kulipanov, G.N., Litvinov, Yu.M., Mazurenko, S.N., Mikhailov, M.A., Panchenko, V.E., Vasenkov, A.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1987
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Summary:The results are presented of X-ray topography exposures of A IIIB V semiconductor autoepitaxial structures and single crystals on the VEPP-4 white SR beam in Laue reflection.
ISSN:0168-9002
1872-9576
DOI:10.1016/0168-9002(87)90612-7