Effect of composition and annealing conditions on the electrical properties of Pb(Zr xTi 1− x)O 3 thin films deposited by the sol-gel process

• Published in: Thin solid films Vol. 252; no. 1; pp. 38 - 43
• Main Authors: Al-Shareef, H.N., Bellur, K.R., Auciello, O., Chen, X., Kingon, A.I.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 1994
• Subjects: Dielectric properties; Dielectrics; Dielectric properties; Dielectrics
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(94)90822-2

The effects of annealing temperature, Zr/Ti ratio and film lead content on the dielectric and ferroelectric properties of Pb(Zr x Ti 1− x )O 3 Pt-based thin film capacitors (Pt/PZT/Pt/Ti/SiO 2/Si) were investigated. The PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650°C is required to obtain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasing Zr content. However, as the number of switching cycles increased passed 10 7-10 8 cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal. Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti ratio and annealing temperature. The small signal dielectric constant showed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.