Growth of SrTiO 3 thin films by pulsed-laser deposition

SrTiO 3 thin films were grown on MgO(001) substrates at a substrate temperature of 600 °C by pulsed-laser deposition. The preferential a axis orientation is enhanced and the lattice parameter is strongly expanded as the oxygen pressure during growth is lowered. The thin film grown at 10 −6 Torr has...

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Bibliographic Details
Published inThin solid films Vol. 227; no. 1; pp. 100 - 104
Main Authors Hiratani, Masahiko, Tarutani, Yoshinobu, Fukazawa, Tokuumi, Okamoto, Masakuni, Takagi, Kazumasa
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1993
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Summary:SrTiO 3 thin films were grown on MgO(001) substrates at a substrate temperature of 600 °C by pulsed-laser deposition. The preferential a axis orientation is enhanced and the lattice parameter is strongly expanded as the oxygen pressure during growth is lowered. The thin film grown at 10 −6 Torr has a lattice parameter as large as 0.395 nm. This is thought to result from oxygen vacancies introduced during growth in a non-thermal equilibrium state. The lattice of the film has a cube-on-cube orientation. Such an epitaxial-like thin film was thought to arise because thin film growth at a low oxygen pressure brings about a molecular-beam-epitaxy-like condition and thus a large migration energy is retained on the substrate surface.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(93)90192-R