Effect of hydrogen on hot electron energy relaxation in SiO 2 and Si 3N 4 films

• Published in: Thin solid films Vol. 221; no. 1; pp. 160 - 165
• Main Authors: Esaev, D.G., Efimov, V.M., Shklyaev, A.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 1992
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(92)90810-X

Silicon dioxide and silicon nitride films with various contents of SiH and NH bonds and OH groups have been studied. By registering the hot electron flow from the free surface on the dielectric under study the effect of hydrogen on the electron cooling has been investigated. It has been established that the main factor responsible for the scattering of electron energy is the presence of any form of hydrogen in the films. The cooling length of electrons whose energy is 2–4 eV in low temperature SiO 2 and Si 3N 4 films ( T synth ≈ 200°C) has been found to be 1–3 nm.