Effects of interfacial states on the capacitance-voltage characteristics of Pd/SiO 2/ n-Si Schottky diodes

• Published in: Solid-state electronics Vol. 30; no. 10; pp. 1005 - 1012
• Main Authors: Bagnoli, P.E., Nannini, A.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 1987
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(87)90091-8

The shape of the 1/ C 2 vs reverse voltage characteristic of a MIS device, with an ultrathin insulating layer, was theoretically examined taking into account interface states effects. The model foresees a linear behaviour with a lower slope with respect to the ideal MS curve if interface states in communication with the semiconductor are present. 1/ C 2-V curves of Pd/SiO 2/ n-Si MIS Schottky diodes were measured under nitrogen and in two hydrogen/nitrogen mixtures, and were compared with Pd/ n-Si curves. Changes of slope and the appearing of non linear behaviour observed in hydrogenated devices are interpreted in terms of interactions between hydrogen atoms and interface states. Pd-gate MIS structures were shown to be an interesting experimental system to observe the effects of interfacial states on the electrical properties of the SiO 2/ n-Si interface.