Piezo-optical response of Si 1− yC y alloys grown pseudomorphically on Si (001)

• Published in: Solid state communications Vol. 96; no. 5; pp. 305 - 308
• Main Authors: Zollner, Stefan, Herzinger, Craig M., Woollam, John A., Iyer, Subramanian S., Powell, Adrian P., Eberl, Karl
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 1995
• Subjects: A. semiconductors; B. epitaxy; D. dielectric response; D. electronic band structure; E. light absorption and reflection; A. semiconductors; D. dielectric response; D. electronic band structure; B. epitaxy; E. light absorption and reflection
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(95)00441-6

We have measured the dielectric functions of three Si 1− y C y alloy layers ( y ≤ 1.4%) grown pseudomorphically on Si (001) substrates using molecular beam epitaxy at low temperatures. From the numerical derivatives of the measured spectra, we determine the critical point energies E′ 0 and E 1 as a function of y ( y ≤ 1.4%) using a comparison with analytical line shapes and analyze these energies in terms of the expected shifts and splittings due to negative pressure, shear stress, and alloying. Our data agree well with the calculated shifts for E 1, but the E′ 0 energies are lower than expected.