Structural heterogeneity in nitrogen-rich a-SiN x:H

Structural heterogeneity in nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN x :H) films prepared by a glow discharge has been investigated and discussed in relation to the breakdown electric field. By a small angle X-ray scattering measurement the films with a small √ B-value have relati...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 198; pp. 15 - 18
Main Authors Hayashi, Hideki, Matsumoto, Shuuji, Nakayama, Yoshikazu
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1996
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Summary:Structural heterogeneity in nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN x :H) films prepared by a glow discharge has been investigated and discussed in relation to the breakdown electric field. By a small angle X-ray scattering measurement the films with a small √ B-value have relative large sized heterogeneity probably due to the compositional fluctuation, while considerable NH 2 bondings in the films are associated with small sized heterogeneity due to a shell structure consisting of NH 2 and NH bondings. An excellent breakdown property is obtained for the films with low heterogeneity.
ISSN:0022-3093
1873-4812
DOI:10.1016/0022-3093(95)00644-3