Chemical and electrochemical interaction of acidic H 2O 2 solutions with (100) InP

The chemical and electrochemical interactions between the (100) InP surface and acidic aqueous H 2O 2 solutions were studied by etch rate, voltammetric, IMPS and electroluminescence measurements. Etching of InP by H 2O 2 appears to occur at a very low rate through a chemical mechanism. Photocurrent...

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Bibliographic Details
Published inJournal of electroanalytical chemistry (Lausanne, Switzerland) Vol. 410; no. 1; pp. 31 - 42
Main Authors Theuwis, A., Vermeir, I.E., Gomes, W.P.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1996
Subjects
Acidified H 2O 2
Etching
InP
Photoanodic dissolution
Photocurrent doubling
Acidified H 2O 2
Photocurrent doubling
Photoanodic dissolution
Etching
InP
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Summary:The chemical and electrochemical interactions between the (100) InP surface and acidic aqueous H 2O 2 solutions were studied by etch rate, voltammetric, IMPS and electroluminescence measurements. Etching of InP by H 2O 2 appears to occur at a very low rate through a chemical mechanism. Photocurrent enhancement caused by H 2O 2 is observed both at the p-InP cathode and at the n-InP anode. Whereas the former effect is ascribed to reduction of H 2O 2 by the well-known current-doubling mechanism, for the latter effect a reaction mechanism is proposed in which intermediates of the photoanodic dissolution reaction of InP are modified by H 2O 2 so that they can more easily inject electrons into the conduction band of the semiconductor.
ISSN:1572-6657
1873-2569
DOI:10.1016/0022-0728(96)04532-9