Control del Factor de Landé en Hilos Cuánticos de GaAs/(Ga,Al)As mediante la Aplicación de Radiación Láser

We study the electronic Landé factor control by changing of both intensity and frequency intense laser field on cylindrical quantum well wire. We use the laser dressed approximation for treated the “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electron...

Full description

Saved in:
Bibliographic Details
Published inTecno - Lógicas (Instituto Tecnológico Metropolitano) pp. 49 - 59
Main Authors Iliana M. Ramírez, Francisco E. López
Format Journal Article
LanguageEnglish
Published Instituto Tecnológico Metropolitano 01.12.2010
Subjects
Campo magnético
factor de Landé
hilos cuánticos
láser
semiconductores
Online AccessGet full text

Cover

More Information
Summary:We study the electronic Landé factor control by changing of both intensity and frequency intense laser field on cylindrical quantum well wire. We use the laser dressed approximation for treated the “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electronic barrier height and electronic effective mass) renormalized by laser effects. We consider a magnetic field applied to parallel direction of symmetric axis of quantum well wire. We take into account nonparabolicity and anisotropy effects on the conduction band by Ogg-McCombe Hamiltonian.
ISSN:0123-7799
2256-5337