INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS

The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.

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Bibliographic Details
Published inDoklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki no. 3; pp. 75 - 80
Main Authors Yu. V. Bogatyrev, S. B. Lastovsky, S. A. Soroka, S. V. Shwedov, D. A. Ogorodnikov
Format Journal Article
LanguageRussian
Published Educational institution «Belarusian State University of Informatics and Radioelectronics 01.06.2019
Subjects
gamma radiation
mos/soi transistor
radiation resistance
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Summary:The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.
ISSN:1729-7648