RELAXATION OSCILLATIONS OF THE SUPERLUMINESCENCE IN THE SEMICONDUCTOR

The intensity modulation of superluminescence with a period of about 1 picosecond in a semiconductor subject to an ultra-short high-power light pulse is shown to occur due to relaxation oscillations of radiation caused by local perturbations of quasi-Fermi distribution of non-equilibrium electrons i...

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Bibliographic Details
Published inVestnik. Seriâ fizičeskaâ Vol. 30; no. 3; pp. 43 - 46
Main Authors S.E. Kumekov, A.T. Mustafin
Format Journal Article
LanguageEnglish
Published Al-Farabi Kazakh National University 01.09.2009
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ISSN1563-0315
2663-2276

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Summary:The intensity modulation of superluminescence with a period of about 1 picosecond in a semiconductor subject to an ultra-short high-power light pulse is shown to occur due to relaxation oscillations of radiation caused by local perturbations of quasi-Fermi distribution of non-equilibrium electrons in energy space.
ISSN:1563-0315
2663-2276