The impruvement of process flow making bipolar static induction transistor and its device-process simulation
The results of the bipolar static induction transistor (BSIT) making process flow improvement and its device-process simulation are presented. The process flow improvement have allowed to reduce number of metal intermediate subject copies (MISC) applied at projection photolithography by one and to r...
Saved in:
Published in | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki no. 3; pp. 70 - 77 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | Russian |
Published |
Educational institution «Belarusian State University of Informatics and Radioelectronics
01.06.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!