The impruvement of process flow making bipolar static induction transistor and its device-process simulation

The results of the bipolar static induction transistor (BSIT) making process flow improvement and its device-process simulation are presented. The process flow improvement have allowed to reduce number of metal intermediate subject copies (MISC) applied at projection photolithography by one and to r...

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Published inDoklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki no. 3; pp. 70 - 77
Main Authors N. L. Lagunovich, V. M. Borzdov, A. S. Turtsevich
Format Journal Article
LanguageRussian
Published Educational institution «Belarusian State University of Informatics and Radioelectronics 01.06.2019
Subjects
bipolar transistor
device-process simulation
making process flow
static induction
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Summary:The results of the bipolar static induction transistor (BSIT) making process flow improvement and its device-process simulation are presented. The process flow improvement have allowed to reduce number of metal intermediate subject copies (MISC) applied at projection photolithography by one and to receive experimental samples of transistor with required electrical characteristic. The BSIT device simulation was performed with using the developed by authors model of transistor and the software package MOD-1D.
ISSN:1729-7648