Diffusive representation and sliding mode control of charge trapping in Al2O3MOS capacitors

• Main Authors: Bheesayagari, Chenna Reddy, Pons Nin, Joan, Atienza García, María Teresa, Domínguez Pumar, Manuel
• Format: Publication
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE) 01.01.2019
• Subjects: Aluminum oxide; Capacitors; Circuits integrats d'alta velocitat; Condensadors variables; Data models; Enginyeria de la telecomunicació; Fonts d'alimentació; Ionizing radiation; MOS capacitors; Predictive models; Radiació ionitzant; Threshold voltage; Very high speed integrated circuits; Àrees temàtiques de la UPC
• ISSN: 0278-0046
• DOI: 10.1109/TIE.2018.2890488

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The objective of this paper is to introduce a modeling strategy to characterize the dynamics of the charge trapped in the dielectric of MOS capacitors, using Diffusive Representation. Experimental corroboration is presented with MOS capacitors made of Alumina in three different scenarios. First, the model predictions are compared with the trapped charge evolution due to arbitrary voltage excitation. Second, the predictions are compared with the measurements of a device in which a sigma-delta control of trapped charge is implemented. Finally, the time evolution when the device is simultaneously controlled and irradiated with X-rays is compared with the predictions. In all cases, a good matching between the models and the measurements is obtained. Peer Reviewed