Crossover from the Mott Variable Range Hopping Conduction Regime to Nearest Neighbor Site Hopping Regime in ZnSxSe1-x Thin Films

• Published in: Armenian journal of physics pp. 7 - 12
• Main Authors: Mounir, Mounir, Mabchour, Mabchour, Ennajh, D., El oujdi, A., El kaaouachi, El kaaouachi, Ait Hammou, B., Echchelh, A., Dlimi, Dlimi
• Format: Journal Article
• Language: English
• Published: 22.05.2023
• ISSN: 1829-1171; 1829-1171
• DOI: 10.54503/18291171-2023.16.1-7

In this work, we study the behavior of resistivity as a function of temperature and for several samples of ZnSxSe1-x thin films with x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0 respectively. In fact, we re-analyze in our investigation experimental measurements obtained by M. Popa et al. [1] in the range of temperature from 300 K to 500 K. We showed that the resistivity follows a nearest neighbor site hopping conduction mechanism with = ( ) for very high temperatures and Mott variable range hopping conduction with = ( ) / for relatively low temperatures. The crossover between the two regimes can be explained by the competition between the localization length scale and the hopping length scale .