Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe 2 O 4 bilayers

Abstract We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe 2 O 4 (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better int...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 17; no. 1; p. 13003
Main Authors Sugino, Masafumi, Ueda, Kohei, Kida, Takanori, Hagiwara, Masayuki, Matsuno, Jobu
Format Journal Article
LanguageEnglish
Published 01.01.2024
Online AccessGet full text

Cover

More Information
Summary:Abstract We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe 2 O 4 (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR, while it influences the magnetic property of the MFO film. Our findings provide important clues to further understanding the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ad0ba4