UTBB FD-SOI MOSFET with SELBOX in DTMOS Configuration

Abstract— For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI)       n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) substrate will be analyzed. The drain and substrate current, transconductance (gm...

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Bibliographic Details
Published inJournal of Integrated Circuits and Systems Vol. 17; no. 3; pp. 1 - 5
Main Authors Junior, Nilton Graziano, Cardoso da Silva, Jeverson, Martins, Everson, Glória Caño De Andrade, Maria
Format Journal Article
LanguageEnglish
Published 31.12.2022
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Summary:Abstract— For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI)       n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) substrate will be analyzed. The drain and substrate current, transconductance (gm) and Subthreshold Slope (SS) will be compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the output conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.
ISSN:1807-1953
1872-0234
DOI:10.29292/jics.v17i3.641