Design and Optimization of Chemical Mixing System for Vacuum Chambers: Simulation Results

Computational fluid dynamics (CFD) is widely used in device design to determine gas flow patterns and turbulence levels.  CFD is also used to simulate particles and droplets, which are subjected to various forces, turbulence and wall interactions. These studies can now be performed routinely because...

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Bibliographic Details
Published inTransdisciplinary journal of engineering & science Vol. 5
Main Authors Unker, Faruk, Kaplan, Erdar, Cuvalci, Olkan
Format Journal Article
LanguageEnglish
Published 01.01.2014
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Summary:Computational fluid dynamics (CFD) is widely used in device design to determine gas flow patterns and turbulence levels.  CFD is also used to simulate particles and droplets, which are subjected to various forces, turbulence and wall interactions. These studies can now be performed routinely because of the availability of commercial software containing high quality turbulence and particle models. In order to understand how the gas is brought down to wafer, it is necessary to have a knowledge of the gas flow behavior very early in the design spiral of the Tantalum nitride-Atomic layer deposition(TaN-ALD) chamber by undertaking parametric investigation of the interaction effect between gas flow and the funnel structure. This paper presents such a  parametric  investigation on a generic TaN-ALD chamber using CFD. The results presented have been analyzed for a total of 11 different cases by varying neck and nozzle angles for a process gas. The gas flow was mainly investigated for the nozzle angles of  4.5◦,  9◦,  12◦  and  20◦ and the film thickness results were compared with numerical flow patterns. CFD simulations using the turbulence model in ANSYS Fluent v.13 are undertaken. The parametric study has demonstrated that CFD is a powerful tool to study the problem of gas flow-structure interaction on funnel and is capable of providing a means of visualizing the path of the gas under different operating conditions
ISSN:1949-0569
1949-0569
DOI:10.22545/2014/0125