Study on Forming-Free Characteristic of Amorphous Carbon Oxide Reram By Controlling Cu-Filament Shape

• Published in: Meeting abstracts (Electrochemical Society) Vol. MA2019-01; no. 23; p. 1166
• Main Authors: Jin, Soo-Min, Kwon, Ki-Hyun, Kim, Dong-Won, Kim, Hea-Jee, Yang, Hun-Mo, Kim, Ji-Yeon, Park, Jea-Gun
• Format: Journal Article
• Language: English
• Published: 01.05.2019
• ISSN: 2151-2043; 2151-2035
• DOI: 10.1149/MA2019-01/23/1166

Resistive random access memory (ReRAM) is one of the most promising candidates for the next-generation memory due to its simple structure, high switching speed and low power consumption [1]. Recently, there has been large interests in using carbon-baed material as solid electrolyte to overcome the limit of conventional metal-oxide memory. It has remarkable advantages over past metal-oxide memory such as high memory margin ( I on /I off > 100) and fast switching speed (20~50ns) [2]. However, the requirement of forming process to activate resisitive switching operation is one of the critical issues. Forming process may degrade the device switching characteristic and is not desirable for circuit design. In this study, forming-free characteristic of a-CO x (amorphous carbon oxide) based ReRAM was observed by controlling the Cu-filament shape. To accurately control the Cu-atom concentration profile, insertion of Cu thin film was carried out in several ways. The first device, named A , was fabricated with the common ReRAM structure of Pt / Cu-doped a-CO x / W. The second device, named B , was vertically stacked with the strcutrue of Pt / a-CO x / Cu-doped a-CO x / W. The third device, named C , was vertically stacked with the strcutrue of Pt / Cu-doped a-CO x / a-CO x / Cu-doped a-CO x / W. The device was fabricated on W bottom electrode wafer patterned from 34 nm to 1921 nm by photo lithography process. The a-CO x and other metals were deposited using dc magnetron sputter (PVD method). After the fabrication, the Cu-atom concentration profile was carefully examined using SIMS analysis to understand the correlation between forming-free chracteristic and Cu-filament shape. Forming-free characteristic device presented identical forming and set voltage of -0.85 V. Moreover, the result indicated that the high resistance state current of 2.41 -7 A at 0.1 V, low resistance state current of 5.98 -5 A at 0.1 V and the memory window margin (I on /I off ) of 2.48×10 2 . In our study, we present that the precise design of the Cu-atom concentration profile of a-CO x based ReRAM is the significant key to achieve the forming-free and stable non-volatile memory characteristic. [1] Daniele Ielmini, Semicond. Sci. Technol. 31 (2016) 063002 [2] Claudia A. Santini et al, NAT COMMUN, 6:8600 (2015) * This material is based upon work supported by the Ministry of Trade, Industry & Energy(MOTIE, Korea) under Industrial Technology Innovation Program (10068055). Figure 1