Effect of Thickness on Electrical and Reliability Characteristics for Dense and Porous Low Dielectric Constant Materials

Thickness-dependent dielectric electrical and reliability characteristics in the dense and porous low- k films were investigated in this study. The experimental results obtained from metal-insulator-silicon (MIS) structures indicate that the dielectric strength and the dielectric breakdown time of l...

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Published inMeeting abstracts (Electrochemical Society) Vol. MA2015-01; no. 44; p. 2294
Main Authors Cheng, Yi-Lung, Kao, Kai-Chieh, Wu, Chang-Sian
Format Journal Article
LanguageEnglish
Published 29.04.2015
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Summary:Thickness-dependent dielectric electrical and reliability characteristics in the dense and porous low- k films were investigated in this study. The experimental results obtained from metal-insulator-silicon (MIS) structures indicate that the dielectric strength and the dielectric breakdown time of low- k dielectric films were inversely proportional to the dielectric physical thickness. A inverse power law combined with an critical thickness for dielectric breakdown characteristics was proposed and well-fitted the experimental results. Additionally, the dense low- k films exhibited a higher critical thickness and a higher power law constant value, indicating that their breakdown behaviors are more related to the film thickness as compared to the porous low- k films.
ISSN:2151-2043
2151-2035
DOI:10.1149/MA2015-01/44/2294